Nanometer scale data storage device and associated positioning system

ABSTRACT

A data storage system that includes a positioning system for positioning the write/read mechanism and the storage medium of the data storage device with respect to each other in first and second predefined directions. The positioning system comprises a positioning apparatus comprising microfabricated first and second positioning assemblies. The positioning system further comprises a controller to position a positionable support structure of the first positioning assembly in a first predefined direction within a range of positioning that is larger than the range of movement of a moveable support structure of the first positioning assembly by controlling (A) a stationary support structure clamp in clamping and unclamping the positionable structure to and from the support structure, (B) a moveable structure clamp in clamping and unclamping the positionable support structure to and from the moveable-support structure, and (C) the movement of the moveable support structure. In one embodiment, one of the write/read mechanism and the storage medium is carried by the positionable support structure so that it is positioned with the first positioning assembly. The other one of the write/read mechanism and the storage medium is positioned with the second positioning assembly. In another embodiment, the positionable support structure carries the second positioning assembly and one of the write/read mechanism and the storage medium is positioned with the second positioning assembly while the other is held stationary. In several embodiments, the read/write mechanism is used to mechanically write data to and electrically read data from the storage medium. In still another embodiment, the read/write mechanism is used to optically write data to and electrically read data from the storage medium. In yet another embodiment, the read/write mechanism is acoustically aided in electrically writing data to and reading data from the storage medium.

FIELD OF THE INVENTION

[0001] The present invention relates generally to data storage devicesand their associated positioning systems. In particular, it relates todata storage devices to store and recover data by producing optical,electrical, or mechanical changes in storage media at nanometer level(i.e., scale) increments (i.e., intervals) with microfabricatedstructures which are positionable at nanometer level increments with thepositioning system of the data storage devices.

BACKGROUND OF THE INVENTION

[0002] UV erasable programmable read only memories (UVPROMs) are wellknown to those skilled in the art. These types of memories comprisedistinct charge storage cells or sites and include a separate read/writeline to each of the charge storage cells. In order to write data to theUVPROM, it is first bulk erased by exposing simultaneously all of thecharge storage cells to UV light or radiation to leak off any chargesstored by them. Then, data is written to selected charge storage cellsby injecting charges in them with the corresponding read/write lines.These charges may then be detected with the read/write lines so as toread data from the charge storage cells. Since UVPROMs include separateread/write lines to the charge storage cells, the charge storage cellsare not able to be spaced apart at nanometer level increments so thatthe overall size of the UVPROM could be reduced. However, a UVPROM typestructure with charge storage cells at nanometer level increments couldbe used if a mechanism were developed that could (1) selectively andindividually write data to each charge storage cell by leaking off acharge in the charge storage cell with UV light, and (2) electricallyread data from each storage cell by detecting or sampling a charge inthe charge storage cell without a read line to the charge storage cell.

[0003] Moreover, recently attempts have been made at providing datastorage devices where data can be electrically or mechanically writtento and electrically read from a storage medium at nanometer levelincrements. However, these data storage devices all suffer fromsignificant problems.

[0004] For example, U.S. Pat. No. 5,317,533, describes a data storagedevice utilizing scanning tunneling microscope (STM) probes to read andwrite data to a storage medium by producing and measuring tunnelingcurrents between the STM probes and the storage medium. Furthermore,U.S. Pat. No. 5,289,408 describes a similar data storage device with apiezoelectric positioning apparatus for positioning STM probes over thestorage medium to read and write data to the storage medium. Thispositioning apparatus is bulky and impractical to use as a part of adata storage device in a computing system. Moreover, since positioningof the STM probes over the storage medium in the X and Y directions islimited to the range of movement of the X and Y piezoelectric translatorelements of the positioning apparatus, the storage capacity of this datastorage device is also limited by this range of movement. And, toincrease this range of movement so that the storage capacity of the datastorage device is increased, the size of the X and Y piezoelectrictranslator elements must also be increased. This unfortunately increasesthe overall size, read/write times, weight, and power requirements ofthe data storage device.

[0005] Furthermore, U.S. Pat. No. 5,038,322 describes still another datastorage device that utilizes STM probes. In this storage device, the STMprobes are used to deform a deformable storage medium to write data toit which is represented by the deformations. Then, by producing andmeasuring a tunneling current between the STM probes and the storagemedium, the deformations can be identified so as to read from thestorage medium the data that was written to it. However, the STM probescomprise a soft conductive material, such as conductive silicon,tungsten, aluminum, or gold which wears down after prolonged use indeforming the storage medium. Thus, the useful life of this type of datastorage device is limited.

SUMMARY OF THE INVENTION

[0006] The foregoing problems are solved by a data storage system thatincludes a positioning system for positioning the write/read mechanismand the storage medium of the data storage device with respect to eachother in first and second predefined directions. The positioning systemcomprises a positioning apparatus comprising microfabricated first andsecond positioning assemblies.

[0007] The first positioning assembly includes a stationary supportstructure, a moveable support structure, a positionable supportstructure, a stationary support structure clamp, and a movable supportstructure clamp. The movable support structure is movably coupled to thestationary support structure and is moveable within a range of movementin a first predefined direction with respect to the stationary supportstructure. The positioning system further comprises a controller toposition the positionable support structure in the first predefineddirection within a range of positioning that is larger than the range ofmovement of the moveable support structure. It does so by controlling(A) the stationary support structure clamp in clamping and unclampingthe positionable structure to and from the support structure, (B) themoveable structure clamp in clamping and unclamping the positionablesupport structure to and from the moveable support structure, and (C)the movement of the moveable support structure.

[0008] In one embodiment, the second positioning assembly comprises astationary support structure and a moveable support structure. Themovable support structure is movably coupled to the stationary supportstructure and is moveable within a range of movement in a secondpredefined direction with respect to the stationary support structure.The controller controls the positioning of the moveable structure in thesecond direction within the range of movement of the moveable structure.In another embodiment, the second positioning assembly may beconstructed and controlled in the same way as the first positioningassembly.

[0009] In one embodiment, one of the write/read mechanism and thestorage medium is carried by the positionable support structure so thatit is positioned with the first positioning assembly. The other one ofthe write/read mechanism and the storage medium is positioned with thesecond positioning assembly. In another embodiment, the positionablesupport structure carries the second positioning assembly and one of thewrite/read mechanism and the storage medium is positioned with thesecond positioning assembly while the other is held stationary.

[0010] In one embodiment, the storage medium is deformable and thewrite/read mechanism comprises one or more write probes and one or moreread probes. The write probes each include a write tip with a highlyobdurate coating capable of deforming the storage medium and a write tippositioning apparatus to lower the write tip. The read probes eachinclude a conductive read tip. The controller is used to (A) during awrite mode, control the first and second positioning apparatus inpositioning the write probes over the storage medium, (B) during thewrite mode, control each write tip positioning apparatus in lowering thecorresponding write tip a predetermined amount into the storage mediumso as to cause a predetermined amount of deformation in the storagemedium representing data written thereto, (C) during a read mode,control the first and second positioning apparatus in positioning theread probes over the storage medium, and (D) during the read mode,produce and measure a tunneling current between each conductive read tipand the storage medium to identify a predetermined amount of deformationcaused in the storage medium during the write mode so that the datawritten thereto is read therefrom.

[0011] In another embodiment, the data storage device comprises one ormore probes each comprising a tip with a conductive highly obduratecoating capable of deforming the storage medium and a tip positioningapparatus to lower the tip. The controller in this embodiment is used to(A) during a write mode, control the probe and storage mediumpositioning apparatus in positioning the probes over the storage medium,(B) during the write mode, control each tip positioning apparatus inlowering the corresponding tip a predetermined amount into the storagemedium so as to cause a predetermined amount of deformation in thestorage medium representing data written thereto, (C) during a readmode, control the probe and storage medium positioning apparatus inpositioning the probes over the storage medium, (D) during the readmode, control each tip positioning apparatus in lowering thecorresponding tip close to the storage medium, and (E) during the readmode, produce and measure a tunneling current between the conductiveobdurate coating of each tip and the storage medium to identify apredetermined amount of deformation caused in the storage medium duringthe write mode so that the data written thereto is read therefrom.

[0012] In still another embodiment, the data storage device comprises astorage medium alterable by light, one or more light emitting writeprobes each capable of emitting light, and one or more read probes eachcapable of detecting alterations of the storage medium caused by light.The controller is used in this embodiment to (A) during a write mode,control the positioning apparatus in positioning the write probes overthe storage medium so that the light emitting write tips are over thestorage medium, (B) during the write mode, control each light emittingwrite probe to emit a predetermined amount of light so as to cause apredetermined amount of alteration of the storage medium so as to writedata thereto, (C) during read modes, control the positioning apparatusin positioning the read probes over the storage medium so that each readprobe detects a predetermined amount of alteration of the storage mediumcaused during the write mode, and (D) during the read mode, measure eachdetected predetermined amount of alteration of the storage medium sothat the data written to the storage medium during the write mode isread therefrom.

[0013] In yet another embodiment, the data storage device comprises anelectrically alterable storage medium, a triangular ridge supportstructure, one or more conductive triangular ridges on the basestructure, and an acoustic wave generator on one of the triangular ridgesupport structure and the storage medium to produce surface acousticwaves thereon that propagate in a direction parallel to the axial lengthof the triangular ridges. The controller in this embodiment is used to(A) during a write mode, control the positioning apparatus inpositioning the triangular ridge support structure over the storagemedium so that each triangular ridge is over a corresponding region ofthe storage medium to be written, (B) during the write mode, control theacoustic wave generator to produce an acoustic wave, (C) during thewrite mode, apply at a predetermined time across each triangular ridgeand the storage medium a voltage pulse having a predetermined voltageand duration while the acoustic wave produced during the write modepropagates so that a portion of the triangular ridge above thecorresponding region to be written is displaced down theretoward and thecorresponding region to be written is electrically altered by apredetermined amount, (D) during a read mode, control the positioningapparatus in positioning the triangular ridge support structure over thestorage medium so that each triangular ridge is over a correspondingregion of the storage medium to be read, (E) during the read mode,control the acoustic wave generator to produce an acoustic wave, (F)during the read mode, with each triangular ridge at a predetermined timewhile the acoustic wave produced during the read mode propagates so thata portion of the triangular ridge above the corresponding region to beread is displaced down theretoward, detect a predetermined amount ofelectrical alteration of the corresponding region to be read causedduring the write mode, (G) during the read mode, measure each detectedpredetermined amount of electrical alteration of the correspondingregion to be read so that the data written thereto during the write modeis read therefrom.

[0014] In still yet another embodiment, the positioning system is usedin a biochemical instrument. The biochemical instrument comprises aprobe that includes a porous tip and a tip positioning apparatus toposition the tip with respect to a sample material. The positioningapparatus is used to position the probe and sample material with respectto each other. The controller is used to (A) control the positioningapparatus in positioning the probe over the sample, and (B) control thetip positioning apparatus in lowering the tip into the sample materialto produce a biochemical interaction between the porous tip and thesample material.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1 shows a positioning system in accordance with the presentinvention.

[0016]FIG. 2 shows another embodiment of the positioning system of FIG.

[0017]FIG. 3 shows yet another embodiment of the positioning system ofFIG. 1.

[0018]FIG. 4 shows a cross sectional side view of the positioning systemof FIG. 1 along the line 4-4.

[0019]FIG. 5 shows a cross sectional side view of the positioning systemof FIG. 1 along the line 5-5.

[0020]FIG. 6 shows a cross sectional side view of the positioning systemof FIG. 1 along the line 6-6.

[0021]FIG. 7 shows a cross sectional side view of the positioning systemof FIG. 1 along the line 7-7.

[0022]FIG. 8 shows the positionable support structure of the positioningsystem of FIG. 1.

[0023]FIG. 9 shows a data storage device in accordance with theinvention which includes the positioning system of FIG. 1.

[0024]FIG. 10 shows a write probe capable of being used in the datastorage device of FIG. 9.

[0025]FIG. 11 shows another embodiment of the tip positioning apparatusof the probes of FIGS. 10, 12

[0026]FIG. 12 shows a read probe capable of being used in the datastorage device of FIG. 9.

[0027]FIG. 13 shows a side cross sectional view of a storage mediumcapable of being used in the data storage device of FIG. 9.

[0028]FIG. 14 shows top cross sectional view of the storage medium ofFIG. 13.

[0029]FIG. 15 shows another storage medium capable of being used in thedata storage device of FIG. 9.

[0030]FIG. 16 shows a side cross sectional view of the storage medium ofFIG. 15.

[0031]FIG. 17 shows another write probe capable of being used in thedata storage device of FIG. 9.

[0032]FIG. 18 shows still another write probe capable of being used inthe data storage device of FIG. 9.

[0033]FIG. 19 shows another embodiment of the read/write mechanism ofFIG. 9.

[0034]FIG. 20 provides another view of the read/write mechanism of FIG.19.

[0035]FIG. 21 shows another embodiment of the read/write mechanism ofFIG. 19.

[0036]FIG. 22 shows a top view of the read/write mechanism of FIG. 21.

DESCRIPTION OF SPECIFIC EMBODIMENTS OF THE INVENTION

[0037] The present invention primarily concerns various types of datastorage systems. These data storage systems are related by theirpositioning systems, storage mediums, and/or read/write mechanisms.

Positioning System

[0038] Referring to FIG. 1, there is shown a positioning system 100 forpositioning objects at nanometer level or scale increments. As will bemore evident from the following discussions, the positioning system maybe used as the positioning system in the data storage devices describedherein or as the positioning system in measuring systems (such as atomicforce microscopes (AFMs), scanning tunneling microscopes (STMs), opticalmicroscopes, and near-field microscopes), microfabrication systems, orother instruments that require precise positioning.

[0039] Positioning system 100 includes a programmed controller 102 and amicrofabricated XY translator or positioning apparatus comprising an Xtranslator assembly 104 to move an object in the X direction and a Ytranslator assembly 106 to move an object in the Y direction. Whenassembled, the X and Y translator assemblies are mounted together withmounting pedestals or bumps 108 and 110. The assembled X and Ytranslator assemblies are sealed airtight in a vacuum or are evacuatedas a final assembly step. Operation in a vacuum substantially improvesthe operational speed of all mechanical elements of the positioningsystem and also inhibits the formation of oxides on these elements.Alternatively, the positioning system may be assembled in and filledwith an inert gas, such as argon, at or near atmospheric pressure.

[0040] X translator assembly 104 may be formed of a semiconductivematerial, such as silicon, and comprises a stationary support structureand a moveable support structure movably coupled to the stationarysupport structure. The stationary support structure comprises astationary support structure base 1 12 and a pair of stationary supportstructure rails or bars 114. The stationary support structure base andrails are integrally connected together. The moveable support structurecomprises a moveable support structure base 118 and a pair of moveablesupport structure rails 120. The moveable support structure base andrails are integrally connected together.

[0041] Furthermore, referring to FIGS. 1 and 4, mounting pedestals 108and 1 10 are integrally connected to stationary support structure base112. Spring connectors 124 are integrally connected to mountingpedestals 108 and are integrally connected to one end of moveablesupport structure base 118 and physically suspend this end over thestationary support structure base. Moreover, the spring connectors actas springs. Thus, the moveable support structure is physically movablycoupled to the stationary support structure by mounting pedestals 108and spring connectors 124.

[0042] Referring back to FIG. 1, to move or drive the moveable supportstructure, X translator assembly 104 also includes an electrostatic combdrive or actuator comprising a stationary comb structure 128 and amoveable comb structure 130. The stationary comb structure is integrallyconnected to stationary support structure base 112. The moveable combstructure is integrally connected to moveable support structure base118.

[0043] The electrostatic comb drive is of the type and operates in themanner described in “Electrostatic Comb Drive for Resonant Sensor andActuator Applications”, University of California at Berkeley DoctoralDissertation, by William Chi-Keung Tang Nov. 21, 1990, which is herebyexplicitly incorporated by reference. Specifically, the comb fingers ofmoveable comb structure 130 are aligned between the comb fingers ofstationary comb structure 128. And, referring to FIGS. 1 and 4, thestationary and moveable comb structures are made to be conductive sothat when a differential voltage is applied across them, their combfingers interact electrostatically with each other and the moveable combstructure is electrostatically suspended over stationary supportstructure base 112 and moves with respect to the stationary combstructure in the X direction. Thus, since one end of moveable supportstructure base 118 is integrally connected to the moveable combstructure, the moveable support structure is electrostatically movablycoupled to the stationary support structure and is moveable in the Xdirection.

[0044] Turning again to FIG. 1, in order to control the electrostaticcomb drive described above, positioning system 100 includes controller102. The controller is electrically coupled to stationary and moveablecomb structures 128 and 130 and provides a differential voltage acrossthem. By controlling the level of the differential voltage, thecontroller can control movement of or drive the moveable supportstructure back and forth in the X direction over the stationary supportstructure with the electrostatic comb drive. For example, when asuitably large differential voltage is applied, the moveable supportstructure moves toward the mounting pedestals 108 and forces springconnectors 124 to be deflected to a position different then their normalundeflected position. Then, when no or a suitably small differentialvoltage is applied, the spring connectors return to their normalundeflected position and force the moveable support structure back to orto be retracted to its original position.

[0045] Moreover, controller 112 can control movement of the moveablesupport structure in nanometer level increments (e.g., 10 nanometerincrements). In other words, the controller can control positioning ofthe moveable support structure at the nanometer level. However, as isevident from the foregoing, the moveable support structure has only alimited range of movement in the X direction at the micrometer level(e.g., 35 to 45 micrometers).

[0046] In an alternative embodiment, a second electrostatic comb drivereplaces mounting pedestals 108 and spring connectors 124 toelectrostatically move and suspend one end of the moveable supportstructure base 118. Thus, in this case, the second electrostatic combdrive is used similarly to and in conjunction with the earlier describedelectrostatic comb drive to electrostatically movably couple themoveable support structure to the stationary support structure.

[0047] In another embodiment, as shown in FIG. 2, the electrostatic combdrive of X translator assembly 104 is replaced by a heater drivecomprising a thermally expandable and contractible structure 132 andheater elements 134 on the thermally expandable and contractiblestructure. One end of the thermally expandable and contractiblestructure is integrally connected to stationary support structure base112. The other end of the thermally expandable and contractiblestructure is integrally connected to moveable support structure base 118and suspends over the stationary support structure base the end of themoveable support structure base coupled to it. The heater elements areused to selectively heat the thermally expandable and contractiblestructure so that it thermally expands and contracts and moves back andforth in the X direction. Thus, since one end of the moveable supportstructure base is integrally connected to the thermally expandable andcontractible structure, the moveable support structure is physicallymovably coupled to the stationary support structure by the thermallyexpandable and contractible structure and is moveable back and forth inthe X direction.

[0048] Furthermore, in this embodiment, to control the heater drive justdescribed, controller 102 is electrically coupled to heater elements 134and thermally expandable and contractible structure 132 to provide acurrent that flows through the heater elements. By controlling theamount of current that flows through the heater elements, the controllercan control positioning of the moveable support structure in nanometerlevel increments in the X direction in a similar manner to thatdescribed earlier for the embodiment of FIG. 1.

[0049] In another embodiment shown in FIG. 3, a piezoelectric driveformed by a piezoelectric structure 136 and electrode#s# 138 fixed tothe piezoelectric structure # (with the electrode on the underside ofthe piezoelectric structure not being shown)# is used to controlmovement of the moveable support structure of X translator assembly 104.#The piezoelectric structure may comprise silicon dioxide such that# oneend of the piezoelectric structure is #integrally# connected to moveablesupport structure base 118 and suspends over stationary supportstructure base 112 the end of the moveable support structure basecoupled to it. The other end of the piezoelectric structure is#integrally# connected to a stationary suspension structure 139 which isitself integrally connected to the stationary support structure base andsuspends the piezoelectric structure over the stationary supportstructure base. The electrodes are used to selectively apply a voltageto the piezoelectric structure to expand and contract it so that itmoves back and forth in the X direction. Thus, since one end of themoveable support structure base is connected to the piezoelectricstructure, the moveable support structure is physically movably coupledto the stationary support structure by the piezoelectric structure andis moveable in the X direction.

[0050] To control the piezoelectric drive just described, controller102, is electrically coupled to electrodes 138 so that it # can providea voltage across the electrodes which is applied to piezoelectricstructure 136 by the electrodes#. The controller can control positioningof the moveable support structure in nanometer level increments back inthe X direction over the stationary support structure in a similarmanner to that described earlier for the embodiment of FIG. 1. It doesso by controlling the level of voltage applied to the piezoelectricstructure.

[0051] Furthermore, turning again to FIG. 1, the stationary supportstructure includes stationary support structure rails 114 and themoveable support structure includes moveable support structure rails120, as alluded to earlier. As shown in FIG. 5, each of the stationarysupport structure rails have ends integrally connected to stationarysupport structure base 112 and have rail portions that are spaced fromthe stationary support structure base. In addition, referring to FIG. 4,the moveable support structure rails each have ends integrally connectedto moveable support structure base 118 and have rail portions that arespaced from the moveable support structure base.

[0052] Referring back to FIG. 1, X translator assembly 104 furtherincludes a positionable support structure 140 which carries an object tobe moved in the X direction. The X translator assembly also includes amoveable support structure rail clamp and a stationary support structurerail clamp to help position the positionable support structure and theobject it carries at the nanometer level in the X direction over a rangeof positioning that is greater than the range of movement of themoveable support structure.

[0053] As shown in FIGS. 6-8, the moveable support structure rail clampcomprises clamping bar extensions or fingers 142, clamping bars 144,push arms 146, and heater elements 160. The stationary support structurerail clamp comprises clamping bar extensions 148, clamping bars 150,push arms 152, and heater elements 162.

[0054] Referring to FIGS. 6 and 7, clamping bar extensions 142 areintegrally connected to positionable support structure 140 and extendover moveable support structure rails 120 and bend down toward moveablesupport structure base 118. Similarly, clamping bar extensions 148 areintegrally connected to the positionable support structure and extendover stationary support structure rails 114 and bend down towardstationary support structure base 112.

[0055] The curved shape of clamping bar extensions 142 and 148 is due toseveral factors. First, referring to FIG. 8, the underside ofpositionable support structure 140 includes conductive interconnects orlines 154, 156, and 158. These interconnects may comprise tungsten andare patterned on and throughout the positionable support structureincluding on the undersides of the clamping bar extensions. The tensileforce of the interconnects on the undersides of the clamping barextensions helps produce their curved shape. Second, referring back toFIGS. 6 and 7, during fabrication, the clamping bar extensions are dopedwith phosphorous which also helps in producing their curved shape.

[0056] Still referring to FIGS. 6 and 7, clamping bars 144 and 150respectively bend in toward moveable and stationary support structurerails 120 and 114 because they are respectively integrally connected tocurve shaped clamping bar extensions 142 and 148. Furthermore, when pusharms 146 and 152 are in their natural positions, clamping bars 144 and150 respectively bend in an engage moveable and stationary supportstructure rails 120 and 114. This is due to the fact that, in theirnatural position, push arms 146 and 152 do not extend out far enough inthe Y direction to respectively engage clamping bars 144 and 150. As aresult, under these conditions, positionable support structure 140 isclamped and coupled to the moveable and stationary support structurerails.

[0057] Moveable and stationary support structure rails 120 and 114 aremade to be conductive. Referring to FIG. 8, therefore, when the moveablesupport structure clamp clamps positionable support structure 140 to themoveable support structure rails, the moveable support structure railsare respectively electrically coupled to interconnects 154 and 156.Similarly, when the positionable support structure is clamped to thestationary support structure rails by the stationary support structureclamp, the stationary support structure rails are respectivelyelectrically coupled to interconnects 156 and 158.

[0058] Furthermore, positionable support structure 140 and push arms 146and 152 are made to be conductive or semiconductive and are electricallycoupled to interconnect 156. And, interconnect 154 is electricallycoupled to heater elements 160 located on stationary support structurerail clamping push arms 148. Moreover, interconnect 158 is electricallycoupled to heater elements 162 located on moveable support structurerail clamping push arms 142.

[0059] Therefore, when positionable support structure 140 is clamped tostationary support structure rails 114, and no or a suitably smalldifferential voltage is applied across them, no current flows throughinterconnect 154, heater elements 160, and interconnect 156. As aresult, push arms 146 remain in their normal positions because heaterelements 160 are not activated. However, when a suitably largedifferential voltage is applied across the stationary support structurerails, current does flow through interconnect 154, heater elements 160,and interconnect 156. Since heater elements 160 are located on push arms142 at locations opposite the notches of the push arms, they heat thepush arms so that they bend in at their notches and extend out in the Ydirection away from positionable support structure 140. As a result, thepush arms engage moveable support structure rail clamping bars 144 andpush these clamping bars away from the moveable support structure railsso that the clamping bars are disengaged from the moveable supportstructure rails. Thus, the positionable support structure is unclampedand uncoupled from (i.e., released from being clamped to) the moveablesupport structure rails.

[0060] Similarly, push arms 152 remain in their normal positions whenpositionable support structure 140 is clamped to moveable supportstructure rails 120 and no or a suitably small differential voltage isapplied across them. This is due to the fact that heater elements 162are not activated in this case since no current flows throughinterconnect 158, heater elements 162, and interconnect 156. However,when a suitably large differential voltage is applied across themoveable support structure rails, current does flow through interconnect158, heater elements 162, and interconnect 156. Since heater elements162 are located on the moveable support structure clamping rail pusharms at the notches of these push arms, they heat these push arms sothat they bend out at their notches and extend out in the Y directionaway from positionable support structure 140. As a result, they engagestationary support structure rail clamping bars 150 and push theseclamping bars away from the stationary support structure rails so thatthese clamping bars are disengaged from the stationary support structurerails. Thus, the positionable support structure is unclamped anduncoupled from the stationary support structure rails.

[0061] Referring back to FIG. 1, controller 102 is electrically coupledto the moveable and stationary support structure rails 120 and 140 toprovide appropriate differential voltages across the moveable supportstructure rails and across the stationary support structure rails so asto produce the clamping and unclamping functions of the moveable andstationary support structure rail clamps just described. In other words,by controlling the level of the differential voltage, the controller cancontrol the clamping and unclamping of the positionable supportstructure to and from the moveable and stationary support structurerails.

[0062] Controller 112, the electrostatic comb, heater, and piezoelectricdrives described earlier, the moveable support structure, the stationarysupport structure, and the moveable and stationary support structurerail clamps just described work cooperatively together to provide ameans to position positionable support structure 140 and the object itcarries at the nanometer level in the X direction over a range ofpositioning that is greater then the range of movement of the moveablesupport structure. To do this, the controller initially applies asuitably large differential voltage across moveable support structurerails 120 to unclamp the positionable support structure from stationarysupport structure rails 114 and no or a suitably small differentialvoltage across stationary support structure rails 120 to keep thepositionable support structure clamped to the moveable support structurerails. Then, the controller applies a suitable differential voltageacross stationary and moveable comb structures 128 and 130 to move themoveable support structure in the X direction. Since the positionablesupport structure is clamped to the moveable support structure rails,the positionable support structure and the object it carries are bothcarried by the moveable support structure. As alluded to earlier, thismay be done in nanometer level increments for positioning of thepositionable support structure and the object it carries at thenanometer level.

[0063] Then, when the maximum distance (i.e., range of movement) of themoveable comb structure in the X direction has been reached, controller112 applies no or a suitably small differential voltage across moveablesupport structure rails 120 to clamp positionable support structure 140to the stationary support structure rails and a suitably largedifferential voltage across stationary support structure rails tounclamp the positionable support structure from the moveable supportstructure rails. The controller then applies a suitable differentialvoltage across stationary and moveable comb structures 128 and 130 toreposition or retract the moveable support structure in the X directionso that it can again move the maximum distance in the X direction. Theprocess just described is then repeated until the positionable supportstructure and the object it carries have been positioned at the desiredpoint in the X direction. Thus, the positionable support structure andthe object it carries can be positioned anywhere along the length of therail portions of the stationary support structure rails. Since the railportions of the stationary support structure rails may have lengths inthe millimeter range, the range of positioning of the positionablesupport structure and the object it carries will in this case be at themillimeter level or scale and will be greater than the range of movementof the moveable support structure.

[0064] Furthermore, as alluded to earlier and shown in FIG. 1,positioning system 100 also includes a Y translator assembly 106. The Ytranslator assembly may be comprised of a semiconductive material, suchas silicon, and includes a stationary support structure 164, a moveablesupport structure 166, a pair of pedestals 168, and a pair of springconnectors 170. These components respectively correspond to stationarysupport structure base 112, moveable support structure base 118,pedestals 108, and spring connectors 124 of X translator assembly 104and are constructed and operate similarly.

[0065] Additionally, Y translator assembly 106 also includes anelectrostatic comb drive comprising a stationary comb structure 172 anda moveable comb structure 174. The stationary and moveable combstructures respectively correspond to stationary comb structure 128 andmoveable comb structure 130 of X translator assembly 104 and areconstructed and operate similarly. Controller 102 is coupled to theelectrostatic comb drive of the Y translator assembly in the same manneras it is coupled to the electrostatic comb drive of the X translatorassembly. As a result, it can control positioning of moveable supportstructure 166 and the object it carries in the Y direction in a similarmanner as was described earlier for the moveable support structure ofthe X direction movement assembly of FIG. 1.

[0066] In alternative embodiments, the electrostatic comb drive may bereplaced by a heater drive or a piezoelectric drive. These heater andpiezoelectric drives would operate and be constructed similarly to theheater drive and piezoelectric drives of FIGS. 2 and 3 and be controlledby controller 102 in the same way as was described earlier.

[0067] In another alternative embodiment, Y translator assembly 106could be mounted to or integrally connected to positionable supportstructure 140 of X translator assembly 104. In this case, in positioningtwo objects relative to each other, one of the objects would be keptstationary and the other object would be carried by moveable supportstructure 166 of the Y translator assembly. Furthermore, in stillanother alternative embodiment, Y translator assembly 106 would bereplaced by another Y translator assembly that is constructed similar toX translator assembly 104.

Mechanical Write/Electrical Read Embodiment

[0068] Referring to FIG. 9, there is shown a data storage device 200that includes the XY translator apparatus and controller 102 ofpositioning system 100 described earlier. In addition, it includes astorage medium 202 and a read/write mechanism comprising one or morewrite probes 204 and one or more read probes 206. Controller 102 is usedin the data storage device not only to control the XY translatorapparatus in positioning the read and write probes and the storagemedium with respect to each other in the X and Y directions, but also incontrolling mechanical writing of data to and electrical reading of datafrom the storage medium by the write and read probes.

[0069] Storage medium 202 is carried by positionable support structure140 of X translator assembly 104. Write and read probes 204 and 206 arecarried by moveable support structure 166 of Y translator assembly 106.Alternatively, the storage medium may be carried by the moveable supportstructure of the Y translator assembly and the write and read probes maybe carried by the positionable support structure of the X translatorassembly. Moreover, the storage medium and the write and read probes maybe positioned with respect to each other with any of the alternativeembodiments described earlier for positioning device 100 or with astandard piezoelectric XY translator apparatus.

[0070] To write up to 33 data bits or data values at a time to storagemedium 202 during a write mode or cycle, write probes 204 can bearranged in three rows of eleven, as shown in FIG. 9. As shown in FIG.10, each write probe includes a tapered write tip 210 and a Z translatoror write tip positioning apparatus for positioning the write tip withrespect to the storage medium in the Z direction.

[0071] The Z translator apparatus comprises a cantilever 208 and acantilever mover. The cantilever mover is a capacitor formed by moveablesupport structure 166, an insulating layer or pad 212, and a conductivelayer or pad 214. The cantilever is integrally connected to the moveablesupport structure and the write tip is integrally connected to and onthe cantilever.

[0072] Each write probe 204 has a core material 216 that comprises aconductive or semiconductive material, such as silicon. The corematerial of each write tip 210 is preferably coated with a highlyobdurate coating 218; such as diamond, silicon carbide, or carbonnitride, which is capable of deforming storage medium 202 and is moreobdurate than conductive silicon, tungsten, aluminum, or gold used inconventional STM tips. This is to reduce frictional wear from long termuse in deforming the storage medium. The obdurate coating may have athickness in the range of approximately 5 Angstroms to 1 micrometer.

[0073] In the case where obdurate coating 218 comprises diamond, writeprobes 204 are first placed in a vacuum chamber containing carbon. Amask is placed over each probe so that only tip 210 is exposed. At apressure of approximately 1×10⁻⁷ to 1×10⁻¹¹, the carbon is heated to atemperature of approximately 2100 to 3000° C. The carbon condenses onthe surface of core material 216 to form seed sights. Alternatively, theseed sights may be formed by pushing or rubbing each write tip 210 on asurface containing fine grain diamond (such as a lap or polycrystallinediamond coated surface). Referring to FIG. 11, write probes 204 are thenplaced in a methane hydrogen atmosphere for chemical vapor deposition(CVD) of diamond on the surface of the core material. As a result of theseed sights, a polycrystaline diamond coating 212 is grown on the corematerial with the diamond crystals being grown normal to the surface ofthe core material. Growth of diamond crystals is further described inDeposition, Characterization, and Device Development in Diamond, SiliconCarbide, and Gallium Nitride Thin Films, by Robert F. Davis, Journal ofVacuum Science and Technology, volume A 11(4) (July/August 1993), whichis hereby explicitly incorporated by reference.

[0074] Moreover, during the deposition process, a bias voltage may beapplied to the core material. This voltage should be sufficient tocreate an electrical field at the sharp end of the write tip largeenough so that the diamond crystals grown at the sharp end of the writetip are symmetrically aligned but small enough so that the diamondcrystals grown below the sharp end of the write tip are notsymmetrically aligned. The advantage of this is to obtain a consistentorientation and tip behavior at the sharp end without sacrificing thedurability and stability of the diamond coating below the sharp end.

[0075] Moreover, in the case where the obdurate coating 218 comprisessilicon carbide, the coating may be grown in the manner described inDeposition, Characterization, and Device Development in Diamond, SiliconCarbide, and Gallium Nitride Thin Films just referenced.

[0076] And, when the obdurate coating 218 comprises carbon nitride, thesame seeding processes as was just described for diamond growth may beused. Then, write probes 204 are placed in an atmosphere of monatomicnitrogen. The monatomic nitrogen is obtained by passing nitrogen gasthrough a hollow tungsten heater consisting of a hollow tungstenstructure through which an electric current is passed. The tungstenheater is maintained at a temperature of 2100 to 3000° C. In oneembodiment, the tungsten heater also includes a quantity of carbonsufficient to combine chemically to form a carbon nitride layer on thecarbon seed sites at the cool surface (800° C.) of core material 216. Inanother embodiment, the process begins without introducing nitrogen gas.After a few atoms of carbon are deposited, the nitrogen gas isintroduced into the tungsten electrode and deposition and growth of thepolycrystalline carbon nitride coating is initiated.

[0077] The types of probes just described are even further described incopending U.S. patent application Ser. No. 08/281,883, entitled“Scanning probe Microscope Assembly and Method for makingSpectrophotometric, Near-Field, and Scanning Probe Measurements”, byVictor B. Kley, which is hereby explicitly incorporated by reference.

[0078] As alluded to earlier, each write probe 204 includes a Ztranslator apparatus comprising cantilever 208 and a capacitor formed bymoveable support structure 166, insulating layer 212, and conductivelayer 214. The moveable support structure is made to be conductive orsemiconductive. In addition, the insulating layer may comprise silicondioxide and the conductive layer may comprise tungsten. Controller 102is electrically coupled to the moveable support structure and theconductive layer. By applying a suitably large voltage across them, thecontroller can control enough energy storage by the capacitor of the Ztranslator apparatus so as to electrostatically move cantilever 208 fromits normal undeflected position to a deflected position and raise writetip 210 in the Z direction away from storage medium 202. By applying noor a suitably small voltage across the moveable support structure andthe conductive layer, the controller can control release of energystorage by the capacitor of the Z translator apparatus so as to movecantilever 208 from its deflected position towards its normalundeflected position and lower write tip 210 in the Z direction towardthe storage medium.

[0079] Referring to FIG. 11, in an alternative embodiment, the Ztranslator apparatus of each write probe 204 may comprise, in additionto cantilever 208, a heater element 220 as the cantilever mover insteadof the capacitor of the positioning apparatus of FIG. 10. The heaterelement is located on the cantilever at the notch formed between thecantilever and moveable support structure 166. Controller 102 iselectrically coupled to the moveable support structure and the heaterelement. By applying a suitably large voltage across them, thecontroller can produce a current through the heater element to thermallyexpand the cantilever at the notch so as to move it from its normalundeflected position to a deflected position and lower write tip 210 inthe Z direction toward storage medium 202. And, by applying no or asuitably small voltage across moveable support structure and the heaterelement, the controller produces no current through the heater elementand the cantilever thermally contracts at the notch and returns from itsdeflected position to its normal undeflected position so as to raisewrite tip in the Z direction away from the storage medium.

[0080] Additionally, in still another embodiment, the Z translatorapparatus of each write probe 204 may be a conventional piezoelectrictranslator. In this case, write tip 210 of each write probe is connectedto the piezoelectric translator and controller 102 is coupled to thepiezoelectric translator to expand and contract it so as to lower orraise the write tip in the Z direction.

[0081] Referring back to FIG. 9, storage medium 202 comprises adeformable conductive material which is capable of being deformed by theobdurate coatings of write tips 210. This material may comprise gold,silicon, carbon, aluminum, silver, or tin.

[0082] Furthermore, still referring to FIG. 9, in a write mode,controller 102 first controls the XY translator apparatus in positioningthe write probes over an area or region of storage medium 202 to bewritten. Since controller 102 is separately electrically coupled to theZ translator apparatus of each write probe 204 in the manner describedearlier, it can selectively or individually control the lowering of eachwrite tip 210 in the Z direction to write individual data bits or datavalues to storage medium 202 during the write mode. Specifically, duringthe write mode, each write tip may be selectively and individuallylowered a selected predetermined amount into the storage medium in themanner just described to cause a selected predetermined amount ofdeformation or indentation in the storage medium which representsdigital or analog data. In an embodiment for writing binary bits ofdigital data with each write tip, a data bit of value “1” and a data bitof value “0” are represented by two different predetermined amounts ofdeformation of the storage medium. Thus, for example, a data bit ofvalue “0” may be represented by no deformation and a data bit of value“1” may be represented by a specific amount of deformation. However, inan embodiment for writing a larger range of digital data values oranalog data values with each write tip, a range of discretepredetermined amounts of deformation would represent a range of digitaldata values and a continuous range of predetermined amounts ofdeformation would represent a range of analog data values. Thus, forexample, in either case the range of predetermined amounts ofdeformation may range from no deformation representing a minimum datavalue to a maximum amount of deformation representing a maximum datavalue.

[0083] The write operation just described is similarly described in U.S.Pat. No. 5,038,322 referred to earlier and hereby explicitlyincorporated by reference. Moreover, since in the embodiment of FIG. 9there are 33 write probes 204, up to 33 data bits or data values at atime may be written to storage medium 202 during a write mode in thismanner.

[0084] In order that the data written to storage medium 202 may beproperly read, a pattern of tracks at regularly spaced intervals areformed on the storage medium. These tracks may be created usingconventional photolithography during the microfabrication process.Alternatively, they may be a series of deformations created in thestorage medium with write tips 210 in the manner described earlier.These tracks may be read out as data bits or data values along with theactual data bits or data values written to storage medium in the mannerdescribed next.

[0085] Referring to FIG. 9, to read up to 33 data bits or data values ata time from storage medium 202 during a read mode, read probes 206 maybe arranged in three rows of eleven. And, referring to FIG. 12, eachread probe includes a tapered read tip 222 and a Z translator or readtip positioning apparatus for positioning the read tip in the Zdirection.

[0086] The Z translator apparatus is constructed and operates like the Ztranslator apparatus of each write probe and therefore comprises acantilever 208 and a capacitor formed by moveable support structure 166,an insulating layer 212, and a conductive layer 214. The cantilever isintegrally connected to the moveable support structure and the read tipis integrally connected to and on the cantilever. Alternatively, the Ztranslator apparatus of each read probe 206 may comprise one of theapparatuses discussed earlier as alternative embodiments to the Ztranslator apparatus of each write probe 204. Thus, each read tip may beselectively and individually lowered toward or raised away from thestorage medium in the Z direction in a similar manner to that describedearlier for each write tip 210.

[0087] Referring to FIG. 12, like each write probe 204, each read probe206 has a core material 216 that comprises a conductive orsemiconductive material, such as silicon. The core material of each readtip 222 is coated with an insulating coating 226, such as silicondioxide, except at the sharp end of the read tip. The insulating coatingand the core material at the sharp end of the tip are coated with aconductive coating 228, such as aluminum, gold, tungsten, or some otherconductive material. To operate each read tip as an STM tip, controller102 is electrically coupled to the conductive coating of the read tip.

[0088] Referring to FIG. 9, in a read mode, controller 102 firstcontrols the XY translator apparatus in positioning the read probes overan area or region of storage medium 202 to be read. Since controller 102is separately electrically coupled to the Z translator apparatus of eachread probe 206, it can selectively and individually control the loweringof each read tip 222 in the Z direction close to the storage medium forreading data from the storage medium during the read mode. Moreover,since the controller is electrically coupled to storage medium 202 andseparately coupled to conductive coating 228 of each read tip, it canselectively and individually produce and measure a tunneling currentbetween the conductive coating of each read tip and the storage mediumduring the read mode. From the measured tunneling current, thecontroller determines the amount of deformation of the storage mediumbelow the read tip so as to read a data bit or data value from thestorage medium which was written during a previous write mode.

[0089] Furthermore, the read operation just described is similarlydescribed in U.S. Pat. No. 5,038,322 referred to earlier and in U.S.Pat. Nos. 5,289,408 and 5,317,533 also referred to earlier and herebyexplicitly incorporated by reference. Furthermore, since there are 33read probes 206 in the embodiment of FIG. 9, up to 33 data bits or datavalues at a time may be read from storage medium 202 during a read modein this manner.

[0090] In the embodiment of FIG. 9, each row of write and read probes204 and 206 are spaced about 30 micrometers apart and the write and readprobes in each row are also spaced about 30 micrometers apart. This isdone to match the ranges of movement of the moveable support structuresof X and Y translator assemblies 104 and 106 so as to maximize theamount of data that can be written to and read from storage medium 202at nanometer level positioning increments over these ranges of movement.

[0091] Additionally, to enable data bits or data values written tostorage medium to be erased, the deformable material of the storagemedium 202 is capable of being heated to or near its melting point. As aresult, in the area where the storage medium is being heated, it will berestored to its normal state and any deformations there representingdata bits or data values will be removed.

[0092] In an erase mode, controller 102 controls the XY translatorapparatus in positioning the read probes over an area or region ofstorage medium 202 to be erased. As indicated earlier, controller 102 isseparately electrically coupled to the Z translator apparatus of eachread probe 206 and can selectively and individually control the loweringof each read tip 222 in the Z direction close to the storage medium forerasing of data from the storage medium during the erase mode.Additionally, referring to FIG. 12, to also enable the erasing of datawritten to the storage medium, the controller is electrically coupled tocore material 216 of each read probe 206 in that moveable supportstructure 166 and read probe 206 are integrally connected and comprise aconductive or semiconductive material.

[0093] Since the controller is separately electrically coupled to theconductive coating of each read tip, as discussed earlier, and iscoupled to the core material 216 of each read tip, it can selectivelyand individually apply a voltage across the conductive coating and corematerial of each read tip during the erase mode. At the sharp end ofeach read tip 222, the conductive coating is in contact with the corematerial and a current is produced between them when the applied voltageacross them reaches the forward bias point of the junction diode theyform. Since the read tip has been lowered close to the storage mediumduring the erase mode, the heat generated by this flow of currentradiates down toward storage medium 202 to heat the area of the storagemedium below the read tip. This restores the storage medium in this areato its natural state and removes any deformation there so that a databit or data value written to the storage medium during a previous writemode and represented by the deformation can be selectively andindividually erased by the controller. Since there are 33 read probes206 in the embodiment of FIG. 9, up to 33 data bits or data values at atime may be erased from storage medium 202 during an erase mode in themanner just described.

[0094] In an alternative embodiment, each read probe 206 would not haveits own Z translator apparatus. Instead, each read probe would beconnected to a large single Z translator apparatus which would becontrolled by controller 102 to lower read tips 222 simultaneouslytogether to perform in bulk the read and erase functions describedearlier.

[0095] Turning to FIG. 13, data bits or data values written to storagemedium 202 may be erased in another way. In this embodiment, the storagemedium comprises a layer of a deformable material 229, as describedearlier, and a heater structure comprising a first insulating layer 230,one or more patterned conductive heater elements 232 over the firstinsulating layer, and a second insulating layer 234 over the firstinsulating layer and heater elements and below the deformable material.

[0096]FIG. 14 shows the patterned layout of heater elements 232.Controller 102 is separately electrically coupled across each heaterelement to selectively and individually apply across the heater elementa voltage to heat the area (i.e., region) of storage medium 202 abovethe heater element. In doing so, controller 102 can selectively removedeformations in particular areas of the storage medium in a similarmanner to that just described and therefore selectively erase data bitsor data values written to these areas.

[0097] Turning again to FIG. 12, in an alternative embodiment,conductive coating 228 comprises an obdurate material, such as diamond,silicon carbide, or silicon nitride, made to be conductive usingconventional doping techniques. For example, these materials may bedoped with boron to make them conductive. In this embodiment, probes 206could then be used not only to read data from storage medium 202 in themanner described earlier, but also write data to storage medium 202 inthe manner described for write probes 204 of FIG. 10. Thus, only onekind of probe could be used in this embodiment to perform reading andwriting of data to and from the storage medium.

[0098] Still referring to FIG. 12, in still another embodiment, the corematerial of read tips 222 would be conductive so that these tips wouldnot require conductive coating 228 and insulating coating 226. In thiscase, the core material may comprise doped silicon, tungsten, aluminum,gold, or some other conductive material.

Optical Write/Electrical Read Embodiment

[0099] Referring to FIGS. 15 and 16, in another embodiment of datastorage device 200, storage medium 202 comprises optically alterablecharge storage cells, regions, or areas of the type used in UV erasableprogrammable read only memories (UVPROMs). However, in this case, thesecharge storage cells do not have individual read/write lines. To providethe charge storage cells, the storage medium comprises a siliconsubstrate 236 in which are formed electrically isolated, spaced apart,and conductively doped wells 238 capable of storing a charge. Controller102 is electrically coupled to the substrate so that it is electricallycoupled to each doped well that forms the charge storage cells.,Moreover, referring to FIG. 9, write probes 204 of the read/writemechanism are constructed to optically write data to the charge storagecells of storage medium 202 while read probes 206 are constructed toelectrically read the data optically written to the charge storagecells. Otherwise, the data storage device in this embodiment isconstructed and operates the same as the one of the mechanicalwrite/electrical read embodiment discussed earlier.

[0100]FIG. 17 shows the construction of each write probe 204 of thisembodiment. Like the write probes of the embodiment of FIG. 10, eachwrite probe has a conductive or semiconductive core material 216, suchas silicon. The core material of each write tip 242 is coated with anemissive coating 244 at a thickness of approximately 10 to 200nanometers. This emissive coating may comprise gallium nitride, galliumarsenide, or silicon carbide all suitably doped to be emissive. Aconductive coating 246, such as aluminum, gold, tungsten, indium tinoxide, or some other conductive material, is over the emissive coatingand has a thickness of approximately 20 to 200 nanometers. About 5 to 10nanometers of the conductive coating at the sharp end may be madesufficiently thin so that it is transparent to blue and/or UV light orabout 5 to 10 nanometers of the conductive coating can removed or rubbedoff from the sharp end of the write tip. This forms an aperture at thesharp end of the tip with a diameter in the range of approximately 5 to100 nanometers. With a voltage of about 4 volts applied across theconductive coating and core material, blue (e.g., 423 nanometerwavelength) and/or ultraviolet (UV) light (e.g., 372 nanometerwavelength) is emitted by emissive coating 240 as described inDeposition, Characterization, and Device Development in Diamond, SiliconCarbide, and Gallium Nitride Thin Films referenced earlier. The lightpropagates through the write tip until it is emitted at its sharp end atthe aperture which has a diameter substantially smaller than thewavelength of the light. This type of probe is even further described inthe copending U.S. patent application Ser. No. 08/281,883 referencedearlier.

[0101] In an alternative embodiment shown in FIG. 18, each write probe204 is comprised of a silicon core material 216. The silicon corematerial at the sharp end of each write tip 248 is porous. This isaccomplished by immersing the write probe in a dilute solution ofHydrofluoric acid or a dilute solution Hydrofluoric and Nitric acid andoperating the silicon write probe as an anode. In addition, a gold orplatinum cathode is also immersed in the solution. A current is thenproduced between the anode and cathode which is sufficient to porouslyetch the sharp end of the write tip (and other sharp edges of the writeprobe) but leave the remainder of the write probe unetched. The siliconcore material of each write tip is coated with an insulating coating250, such as silicon dioxide, except at the sharp end of the read tip.The insulating coating and the porous core material at the sharp end ofthe tip are coated with a conductive coating 252, such as aluminum,gold, tungsten, indium tin oxide, or some other conductive material. Toform an aperture at the sharp end of the tip, about 5 to 10 nanometersof the conductive coating at the sharp end may be made sufficiently thinso that it is transparent to light or about 5 to 10 nanometers of theconductive coating can removed or rubbed off from the sharp end of thewrite tip.

[0102] Controller 102 is electrically coupled to core material 216 ofeach write probe 248 in that moveable support structure 166 and writeprobe 248 are integrally connected and comprise silicon. Moreover, thecontroller is separately electrically coupled to conductive coating 252of each write tip 248. Thus; the controller can selectively andindividually apply a voltage across the conductive coating and corematerial of each read tip. Since at the sharp end of each write tip theconductive coating is in contact with the porous core material, acurrent can is produced between them when the voltage is applied whichcauses the porous core material at the sharp end to emit light throughthe aperture of the write tip.

[0103] Alternatively, write tip 248 may be uncoated. In this embodiment,controller 102 may be electrically coupled across core material 216 ofeach write tip and substrate 230 of storage medium 202. By selectivelyand individually applying a voltage across them, a current will beproduced between the charge storage cell close to the write tip and thewrite tip which causes the porous core material at the sharp end of thewrite tip to emit light.

[0104] Light emission by porous silicon is further described in AnImproved Fabrication Technique for Porous Silicon, Review of ScientificInstruments, v64, m2 507-509 (1993), Photoluminescence Properties ofPorous Silicon Prepared by Electrochemical Etching of Si EpitaxialLayer, Act. Physics Polonica A, v89, n4, 713-716 (1993), Effects ofElectrochemical Treatments on the Photoluminescence from Porous Silicon,Journal of the Electrochemical Society, v139, n9, L86-L88 (1992),Influence of the Formation Conditions on the Microstructure of PorousSilicon Layers studied by Spectroscopic Ellipsometry, Thin Solid Films,v255, n1-2 ; 5-8 (1995), and Formation Mechanism of Porous Si LayersObtained by Anodization of Mono-Crystalline N-type Si in HF Solution andPhotovoltaic Response in Electrochemically Prepared Porous Si, SolarEnergy Materials and Solar Cells, v26, n4, 277-283, which are herebyexplicitly incorporated by reference.

[0105] Furthermore, referring to FIG. 9, in a write mode, controller 102first controls the XY translator apparatus in positioning write probes204 over charge storage cells to be written. As discussed earlier,controller 102 is separately electrically coupled to the Z translatorapparatus of each write probe 204 and can selectively control thelowering of each write tip 242 in the Z direction to write data to acharge cell during the write mode. Moreover, as shown in FIGS. 17 and18, controller 102 is separately electrically coupled to each writeprobe to make it emit light. Thus, during a write mode, the controllercan selectively and individually control each write tip to write a databit or data value to a charge storage cell by emitting a selectedpredetermined amount of light close to a charge cell in the manner justdescribed to cause a selected predetermined amount of charge in thecharge storage cell to be optically leaked off, altered, or changed sothat the charge storage cell stores a selected predetermined amount ofcharge representing the data bit or data value.

[0106] Specifically, in an embodiment for writing binary bits of digitaldata with each write tip, a data bit of value “1” and a data bit ofvalue “0” are represented by two different predetermined amounts ofcharge in a charge cell. Thus, for example, a data bit of value “0” maybe represented by a specific charge amount that has been opticallychanged and a data bit of value “1” may be represented by a specificcharge amount that has not been optically changed. However, in anembodiment for writing a larger range of digital data values with eachwrite tip, a range of predetermined charge amounts represent a range ofdigital data values. Thus, for example, the range of predeterminedcharge amounts may range from no charge representing a minimum datavalue to a maximum amount of charge representing a maximum data value.Since there are 33 write probes, up to 33 data bits or data values canbe written to up to 33 charge storage cells during a write mode in themanner just described.

[0107] Referring to FIG. 12, read probes 206 in this embodiment may beconstructed in the same way as those of the mechanical write/electricalread embodiment described earlier. Thus, in a read mode, controller 102controls the XY translator apparatus in positioning the read probes overcharge storage cells to be read. And, as described earlier, controller102 is separately electrically coupled to the Z translator apparatus ofeach read probe 206 and can individually and selectively control thelowering of each read tip 222 in the Z direction to detect with theconductive coating of the read tip a charge in a charge storage cell ofstorage medium 202. Moreover, since the controller is also separatelycoupled to conductive coating 228 of each read tip, it can individuallyand selectively measure the amount of the detected charge so as to reada data bit or data value from the charge storage cell which was writtenduring a previous write mode. In other words, the read tip is used todetect the predetermined amount of alteration of the charge storage cellcaused during a write mode and the controller measures the detectedamount to read the data bit or data value written during the write mode.Since there are 33 read probes, up to 33 data bits or data values at atime during a read mode can be read in this manner from up to 33 chargestorage cells.

[0108] Furthermore, referring to FIGS. 15 and 16, as indicatedpreviously the charge storage cells are of the type found in UVPROMs.However, read/write lines are eliminated such that the charge storagecells may be made much smaller and spaced much closer than inconventional UVPROMs. As a result, in this embodiment, the size of thecharge storage cells may be on the nanometer level and the chargestorage cells may be spaced apart at nanometer level increments. This isso that data can be written to and read from storage medium 202 atnanometer level increments of positioning using X and Y translatorassemblies 104 and 106 of FIGS. 1 and 9 in the manner described earlier.

[0109] Additionally, the typical standard energy from common UV sourcesused to erase UVPROMs is on the order of 10⁻⁹ watts per micrometer.However, light emitting tips 242 and 248 described herein will easilyproduce UV energy at a near-field intensity of 10⁷ to 10⁸ times moreintense which results in write times on the order of 1 to 10microseconds.

[0110] Furthermore, during an erase mode, controller 102 controls the XYtranslator apparatus in positioning read probes 206 over charge storagecells to be erased. Since controller 102 is separately electricallycoupled to the Z translator apparatus of each read probe 206, it canindividually and selectively control the lowering of each read tip 222in the Z direction close to storage medium 202 for erasing of data froma charge storage cell during the erase mode. Moreover, referring toFIGS. 12 and 16, as discussed earlier, the controller is separatelyelectrically coupled to conductive coating 228 of each read tip and iselectrically coupled to substrate 236 of the storage medium. Thus, itcan individually and selectively apply a selected predetermined voltageacross the conductive coating of each tip and the charge storage cellunder the tip during the erase mode. Since the read tip is lowered closeto the charge storage cell during the erase mode, this results in aselected predetermined amount of tunneling current being producedbetween the conductive coating and the charge storage cell so that aselected predetermined amount of charge is injected or transferred intothe charge storage cell. Thus, the charge in the charge storage cell isrestored to this predetermined amount so that it can be changed in asubsequent write mode when again writing a data bit or data value to thecharge storage cell. Since there are 33 read probes 204, up to 33 databits or data values may be erased at a time during an erase mode from upto 33 charge storage cells in the manner just described.

[0111] Referring to FIGS. 15 and 16, data bits or data values written tothe charge storage cells of storage medium 202 may also be eased inanother way. Specifically, the storage medium also includes aninsulating layer 254 around doped wells 238. Over the insulating layerare one or more patterned conductors 256 around one or morecorresponding areas or regions of the doped wells.

[0112] Controller 102 is separately electrically coupled across eachconductor and the silicon substrate to selectively and individuallyapply across them a predetermined voltage. This produces a selectedpredetermined amount of tunneling current between the conductor and thecharge storage cells in the corresponding selected region and injects aselected predetermined amount of charge into these charge storage cells.As a result, any data bits or data values written to these chargestorage cells during a previous write mode are erased in a similarmanner to that just described.

[0113] In alternative embodiments, the storage medium may comprise othertypes of materials or structures which can be optically altered atdiscrete increments, regions, or intervals by light emissions from thetypes of write probes 204 discussed next.

[0114] In an additional alternative embodiment, each write and readprobe 204 and 206 would not have its own Z translator apparatus.Instead, each write probe would be connected to a large single Ztranslator apparatus which would be controlled by controller 102 tolower write tips 242 or 248 simultaneously together to perform in bulkthe write function described earlier. Moreover, each read probe wouldalso be connected to a large single Z translator apparatus which wouldbe controlled by controller 102 to lower read tips 222 simultaneouslytogether to perform in bulk the read and erase functions describedearlier.

[0115] Referring to FIGS. 9 and 18, in still another alternativeembodiment, instead of being used as a data storage device, device 200could be used as a biochemical instrument. In this case, the biochemicalinstrument includes one or more probes 204 each having a tip 248 with aporous sharp end, as described earlier, but without insulating andconductive coatings 250 and 252. Specifically, by controlling the etchcurrent and etch time of the process described above, the pore width anddepth of a region of several angstroms in length at the sharp end of thetip can be controlled. As a result, binding cites of a specific size forselected molecules can be made in the tip at the sharp end so thatcontroller 102 could control the lowering and raising of the tip, in themanner described earlier, into and from a biochemical substance tobiochemically interact with it.

[0116] For example, a tip of this embodiment which holds specific typesof molecules in its binding cites could be lowered into and out of anassay for viruses or other bioactive chemicals or biostructures todeposit them into or remove them from the assay. Similarly, a tip thatholds in its binding cites the molecules of a catalytic chemical may belowered into a substance to produce a catalytic reaction in thesubstance. Or, the tip may be lowered into and raised from a biochemicalsubstance, such as a cell, to attract and pick up specific molecules atthe binding cites of the tip. Additionally, the binding sites may holdthe molecules of a chemically active material so that when the tip islowered into an unknown sample of organic or inorganic material, thebinding energy or attractive force between the molecules of thechemically active and sample materials can be measured by the deflectionof cantilever 208 to characterize the sample material. In this case, thedeflection of the cantilever would be determined by the controller bymeasuring changes in the energy storage of the capacitor describedearlier (formed by the moveable support structure 166, insulating layer212, and conductive layer 214) or with a laser and photodetectorassembly like in a conventional AFM and described further in thecopending U.S. patent application Ser. No. 08/281,883 referencedearlier.

Electrical Write/Read Embodiment

[0117] Referring to FIGS. 15 and 16, in another embodiment of datastorage device 200, storage medium 202 comprises charge storage cells,regions, or areas similar to the UVPROM type charge storage cells of theoptical write/electrical read embodiment described earlier and of thetype used in electronically erasable programmable read only memories(EEPROMs). However, like the UVPROM type charge storage cells, they donot have read/write lines and are constructed similar to the UVPROM typestorage cells.

[0118] Referring to FIG. 12, in this embodiment, data storage deviceuses only probes 206 of the type described in the mechanicalwrite/electrical read embodiment. These probes are used to electricallyread and erase data from the charge storage cells in a similar manner tothat discussed earlier. Moreover, they are also used to electricallywrite data to the charge storage cells which is done in a similarfashion to the way in which data is erased from the charge storagecells. However, in this case, a predetermined amount of charge ofopposite polarity to the charge injected during an erase mode isinjected into a charge storage cell to change the charge stored by thecharge storage cell and write to it a data bit or data value. In otherwords, In other words, the charge storage cell is electrically alteredby a predetermined amount to write data to it. Otherwise, this writeoperation is the same as the erase operation discussed earlier and isfurther described in U.S. Pat. Nos. 5,289,408 and 5,317,533.

[0119] Furthermore, like the UVPROM type storage cells discussedearlier, the size of the EEPROM type charge storage cells may be at thenanometer level and they may be spaced apart at nanometer levelincrements since they do not require address lines and read/write lines.Thus, in this embodiment as well, data can be written to and read fromstorage medium 202 at nanometer level increments of positioning using Xand Y translator assemblies 104 and 106 of FIGS. 1 and 9 in the mannerdescribed earlier.

[0120] In alternative embodiments, the storage medium may comprise othertypes of materials or structures which can be electrically altered atdiscrete increments, regions, or intervals by tunneling currents fromthe types of probes 206 discussed next. These types of materials orstructures may include magnetic materials or the types of materials andstructures as described in U.S. Pat. Nos. 5,289,408 and 5,317,533referred to earlier.

Acoustically Aided Electrical Write/Read Embodiment

[0121] Referring to FIGS. 15 and 16, in another embodiment of datastorage device 200, storage medium 202 also comprises the EEPROM typecharge storage cells described earlier for the electrical write/readembodiment. Furthermore, referring to FIGS. 19 and 20, in thisembodiment, the write and read probes 204 and 206 described earlier arereplaced by a write/read mechanism that operates similarly to the probes206 of the electrical write/read embodiment but is acoustically aided.The acoustically aided electrical write/read mechanism comprises a ridgesupport structure 254, one or more parallel triangular ridges 256integrally connected to the base support structure, and an acoustic wavegenerator on the ridge support structure comprising two interleavedpiezoelectric transducers or actuators 258. The storage medium andacoustically aided electrical write/read mechanism can be positionedwith respect to each other in the ways described earlier.

[0122] Triangular ridges 256 extend down from the flat lower surface ofridge support structure 254. The triangular ridges are constructedsimilarly to tips 222 of FIG. 12 in that each has a conductive orsemiconductive core material, such as silicon, integrally connected tothe ridge support structure, an insulating coating over the corematerial except at the sharp end of the ridge, and a conductive coatingover the insulating coating and the core material at the sharp end.Moreover, controller 102 is also separately electrically coupled to theconductive coating of each of the triangular ridges.

[0123] Referring back to FIGS. 19 and 20, piezoelectric transducers 258of the acoustic wave generator are positioned on the flat upper surfaceof ridge support structure 254 so as to generate surface acoustic waves255 that propagate on the upper surface in the X direction and parallelto the axial length of the triangular ridges in the Y direction.Controller 102 is electrically coupled to the piezoelectric transducersto generate a surface acoustic wave during each write, read, and erasemode.

[0124] During a write mode, controller 102 first controls the XYtranslator apparatus in positioning triangular ridges 258 overcorresponding charge storage cells to be written. Then, the controllercontrols the acoustic wave generator in generating an acoustic wave thatpropagates on the surface of the ridge support structure parallel to theaxial lengths of the triangular ridges. To write a data bit or datavalue to a particular charge storage cell under each triangular ridge,controller 102 selectively and individually applies a write voltagepulse of a selected predetermined voltage across the conductive coatingof the triangular ridge and the substrate of storage medium 202 at aselected predetermined time and for a selected predetermined timeinterval or duration during the propagation of the acoustic wave. Thepredetermined time corresponds to the location of the charge storagecell because at this predetermined time the portion of the ridge supportstructure over the charge storage cell is displaced by the propagatingsurface acoustic wave down toward the charge storage cell so that theportion of the triangular ridge connected to this portion of the ridgesupport structure is also displaced down toward the charge storage cell.As a result, the predetermined voltage of the write voltage pulse overthe predetermined time interval produces a selected predetermined amountof tunneling current between the conductive coating of the triangularridge and the charge storage cell. Thus, a charge of a selectedpredetermined amount is injected into the charge storage cell so that adata bit or data value is written to it in a similar manner to thatdescribed earlier in the electrical write/read embodiment. In otherwords, the charge storage cell is electrically altered by apredetermined amount.

[0125] For example, the speed of a surface acoustic wave in ridgesupport structure 254 may be about 1000 meters/sec (typical forsemiconductive materials). Thus, if the storage medium includes 1000charge storage cells under a triangular ridge over a 1 millimeterdistance along the propagation direction of an acoustic wave, then theacoustic wave would traverse each charge storage cell in 1 nanosecond.In order to write a data bit or data value to the 500th charge storagecell under a particular triangular ridge, a write voltage pulse would beapplied across the conductive coating of the triangular ridge and thesubstrate of the storage medium for a 1 nanosecond time interval 500nanoseconds after the wave front of the acoustic wave first beginspropagating over the triangular ridge. Since there are 8 triangularridges in the embodiment of FIGS. 19 and 20, up to 8 data bits or datavalues can be written at a time during a write mode to up to 8 chargestorage cells in the manner just described.

[0126] Similarly, in a read mode, controller 102 controls positioning oftriangular ridges 258 over corresponding charge storage cells to be readand controls the acoustic wave generator in generating an acoustic wave.Controller 102 then measures the amount of the charge detected by theconductive coating of each triangular ridge at a selected predeterminedtime and for a selected predetermined time interval during thepropagation of the acoustic wave. As in the write mode, thepredetermined time corresponds to the location of the charge storagecell so that at this predetermined time the triangular ridge isdisplaced down toward the charge storage cell in the manner describedearlier and the conductive coating of the triangular ridge detects thecharge of the charge storage cell. As a result, a data bit or data valueis read from the charge storage cell in a similar manner to thatdescribed earlier in the optical write/electrical read and electricalwrite/read embodiments. In other words, the triangular ridge is used todetect the predetermined amount of electrical alteration of the chargestorage cell during a write mode and the controller measures thedetected amount to read the data bit or data value written during thewrite mode. Up to 8 data bits or data values can be read at a timeduring a read mode from up to 8 charge storage cells in the manner justdescribed since there are 8 triangular ridges in the embodiment of FIGS.19 and 20.

[0127] Additionally, in an erase mode, data bits or data values areerased in a similar fashion to which they are written. However, duringthe erase mode, a predetermined amount of charge of opposite polarity tothe charge injected during an erase mode is injected into a chargestorage cell to change the charge stored by the charge storage cell anderase a data bit or data value written during an earlier write mode.

[0128] Controller 102 adjusts the timing and duration of the write anderase voltage pulses during write and erase modes and the timing andduration of the charge detection during a read mode to corresponding tochanges in temperature. As a result, the position in the storage mediumover which a read or write is done always remains constant regardless oftemperature change.

[0129] Furthermore, bulk erasing may also be performed in the samemanner as described earlier in the optical write/electrical read andelectrical write/read embodiments.

[0130] In an alternative embodiment, the acoustic wave generator may bepositioned instead on the upper surface of storage medium 202. As in theembodiment where it is positioned on ridge support structure 254, itwould be positioned so that the acoustic waves it generates propagate ina direction parallel to the axial length of triangular ridges 256. As aresult, the charge storage cells would be displaced rather than thetriangular ridges in positioning the triangular ridges close to thecharge storage cells to write, read, and erase data in the waysdescribed earlier.

[0131] In other alternative embodiments, the core material of triangularridges 256 would be conductive so that these tips would not require aconductive coating and an insulating coating. In this case, the corematerial may comprise doped silicon, tungsten, aluminum, gold, or someother conductive material. Moreover, the storage medium could comprisean electronically alterable material or structure of the type alsodescribed in the electrical write/read embodiment.

[0132] Similar to the read and write probes 204 and 206 of the earlierdiscussed embodiments, triangular ridges 256 could be spaced about 30micrometers apart. Referring to FIG. 9, this is done to match the rangeof movement of the moveable support structure of Y translator assembly106 so as to maximize the amount of data that can be written to and readfrom storage medium 202 at nanometer level positioning increments overthis range of movement.

[0133] Finally, positioning of storage medium 202 and the acousticallyaided electrical write/read mechanism could be alternativelyaccomplished as shown in FIGS. 21 and 22. In this case, a Y translatorapparatus that comprises a stationary support structure 260, a pair ofthermally expandable and contractible structures 262, and heaterelements 264 is used to position the triangular ridges over chargestorage cells in the Y direction (i.e., orthogonal to the direction ofpropagation of the surface acoustic waves generated by the acoustic wavegenerator).

[0134] In this embodiment, storage medium 202 is fixedly coupled tostationary support structure 260 and ridge support structure 254 hasvertical end portions that rest on but are not directly connected to thestationary support structure. Each of the end portions is integrallyconnected to a corresponding thermally expandable and contractiblestructure 262. The thermally expandable and contractible structures areboth integrally connected to the stationary support structure. Heaterelements 264 are located at the elbows of the thermally expandable andcontractible structures and are used to selectively heat the thermallyexpandable and contractible structures so that they thermally expand andcontract and move back and forth in the Y direction. Thus, the thermallyexpandable and contractible structures movably couple the stationarysupport structure to the ridge support structure in a way similar tothat described earlier in which thermally expandable and contractiblestructure 132 movably couples the stationary support structure and themoveable support structure of the X translator assembly 104 of FIG. 2.

[0135] Furthermore, in this embodiment, to control the heater drive justdescribed, controller 102 is electrically coupled to heater elements 264and thermally expandable and contractible structures 262 to provide acurrent that flows through the heater elements. By controlling theamount of current that flows through the heater elements, the controllercan control positioning of ridge support structure 254 in nanometerlevel increments in the Y direction in a similar manner to thatdescribed earlier for the embodiment of FIG. 1.

[0136] Alternatively, the vertical end portions of ridge supportstructure 254 could be fixedly coupled to stationary support structure260. In this case, storage medium 202 would be movably coupled to thestationary support structure 260 by thermally expandable andcontractible structures like those just discussed and positioning of thestorage medium in the Y direction would be accomplished similarly tothat just discussed.

[0137] Furthermore, in still other embodiments, piezoelectrictransducers, like those discussed for X translator assembly 104 of FIG.3, could be used in place of the thermally expandable and contractiblestructures and heater elements in the embodiments just discussed. Theirmovement would be accomplished in a similar way to that discussed forthe X translator assembly of FIG. 3.

Conclusion

[0138] While the present invention has been described with reference toa few specific embodiments, the description is illustrative of theinvention and is not to be construed as limiting the invention.Furthermore, various other modifications may occur to those skilled inthe art without departing from the true spirit and scope of theinvention as defined by the appended claims.

What is claimed is:
 1. A positioning system for positioning an object ina predefined direction, the positioning system comprising: amicrofabricated positioning assembly comprising: a stationary supportstructure; a moveable support structure movably coupled to the supportstructure and moveable within a range of movement in the predefineddirection with respect to the support structure; a positionable supportstructure positionable in the predefined direction; a stationary supportstructure clamp to clamp and unclamp the positionable support structureto and from the stationary support structure; a moveable supportstructure clamp to clamp and unclamp the positionable support structureto and from the moveable support structure; and a controller to controlpositioning of the positionable support structure in the predefineddirection within a range of positioning that is larger than the range ofmovement of the moveable support structure by controlling (A) thestationary support structure clamp in clamping and unclamping thepositionable support structure to and from the stationary supportstructure, (B) the moveable support structure clamp in clamping andunclamping the positionable structure to and from the moveable supportstructure, and (C) the movement of the moveable support structure; theobject being disposed on the positionable support structure so that theobject is positionable in the predefined direction within the range ofpositioning.
 2. A positioning assembly as recited in claim 1 wherein thepositionable structure is positioned at nanometer level increments.
 3. Apositioning assembly as recited in claim 2 wherein the range of movementis on a micrometer level.
 4. A positioning assembly as recited in claim3 wherein the range of positioning is on a millimeter level.
 5. Apositioning system as recited in claim 1 further comprising: anelectrostatic comb drive to electrostatically movably couple themoveable structure to the stationary support structure, theelectrostatic comb drive comprising: a stationary comb structureconnected to the stationary support structure; and a moveable combstructure connected to the moveable support structure, the moveable combstructure electrostatically interacting with the stationary combstructure to move in the predefined direction with the moveable supportstructure; the controller controlling the movement of the moveablestructure by controlling the electrostatic interaction of the stationaryand moveable comb structures.
 6. A positioning system as recited inclaim 1 further comprising: a piezoelectric drive connected between thestationary and moveable support structures to movably couple themoveable support structure to the stationary support structure, thepiezoelectric drive expanding and contracting in the predefineddirection to move the moveable support structure in the predefineddirection; the controller controlling the movement of the moveablesupport structure in the predefined direction by controlling theexpansion and contraction of the piezoelectric drive.
 7. A positioningsystem as recited in claim 1 further comprising: a heater drive tomovably couple the moveable structure to the support structure, theheater drive comprising: heater elements disposed on the thermallyexpandable and contractible structure to thermally expand and contractthe thermally expandable and contractible structure in the predefineddirection to move the moveable support structure in the predefineddirection; the controller controlling the movement of the moveablesupport structure by controlling the thermal expansion and contractionof the thermally expandable and contractible structure by the heaterelements.
 8. A positioning assembly as recited in claim 1 wherein atleast one support structure clamp and the at least one moveablestructure clamp are connected to the positionable structure.
 9. Apositioning assembly as recited in claim 8 wherein: the supportstructure includes support structure rails extending in the predefineddirection; the stationary support structure clamp clamps and unclampsthe positionable support structure to and from the stationary supportstructure rails; the moveable support structure includes rails extendingin the predefined direction; and the moveable support structure clampclamps and unclamps the positionable support structure to and from themoveable support structure rails.
 10. A data storage device comprising:a deformable storage medium; one or more write probes each comprising: awrite tip comprising a highly obdurate coating capable of deforming thestorage medium; a write tip positioning apparatus to position the writetip with respect to the storage medium; one or more read probes eachincluding a conductive read tip; a probe and storage medium positioningapparatus to position the read and write probes with respect to eachother; a controller to (A) during a write mode, control the probe andstorage medium positioning apparatus in positioning the write probesover the storage medium, (B) during the write mode, control each writetip positioning apparatus in lowering the corresponding write tip apredetermined amount into the storage medium so as to cause apredetermined amount of deformation in the storage medium representingdata written thereto, (C) during a read mode, control the probe andstorage medium positioning apparatus in positioning the read probes overthe storage medium, and (D) during the read mode, produce and measure atunneling current between each conductive read tip and the storagemedium to identify a predetermined amount of deformation caused in thestorage medium below the corresponding read tip during the write mode sothat the data written thereto is read therefrom.
 11. A data storagedevice as recited in claim 10 further comprising: a heater element belowthe storage medium; the controller controlling during erase modes theheater element to heat the storage medium until deformations caused inthe storage medium are removed.
 12. A data storage device as recited inclaim 10 further comprising: a plurality of heater elements below thestorage medium; the controller controlling during an erase mode aselected one of the heater elements to heat the storage medium untildeformations caused in the storage medium above the selected one of theheater elements are removed.
 13. A data storage device as recited inclaim 10 wherein: each read tip further comprises: a core material witha sharp end; and an insulating coating over the core material except atthe sharp end; the highly obdurate coating being over the core materialat the sharp end and the insulating coating; the controller (A) duringan erase mode, controls the probe and storage medium positioningapparatus in positioning the read probes over the storage medium, and(B) during the erase mode, produces a current between the conductivecoating and the core material of each read tip to heat the storagemedium below the corresponding read tip until a deformation caused inthe storage medium below the corresponding read tip during the writemode is removed.
 14. A data storage device as recited in claim 10wherein the highly obdurate material comprises diamond.
 15. A datastorage device as recited in claim 10 wherein: the tip has a sharp end;and the diamond is aligned at the sharp end with a bias field at thesharp end during growth of the diamond.
 16. A data storage device asrecited in claim 10 wherein the highly obdurate material comprisessilicon carbide.
 17. A data storage device as recited in claim 10wherein the highly obdurate material comprises carbon nitride.
 18. Adata storage device as recited in claim 1 wherein: the positioningapparatus includes a moveable support structure to which the writeprobes are connected; the controller controlling positioning of themoveable support structure and the storage medium with respect to eachother during the write mode to control positioning of the write probesover the storage medium; the write tip positioning apparatus of eachwrite probe comprising: a cantilever connected to the moveable supportstructure and on which is located the write tip of the write probe; acantilever mover to move the cantilever; the controller controllingduring the write mode each cantilever mover to move the correspondingcantilever a predetermined amount so as to lower the corresponding writetip into the storage medium a predetermined amount to cause apredetermined amount of deformation in the storage medium.
 19. A datastorage device as recited in claim 18 wherein: the cantilever mover ofeach write probe comprises a heater element disposed on the cantileverof the write probe; the controller controls during the write modes eachheater element to thermal expandably move the corresponding cantilever apredetermined amount so as to lower the corresponding write tip into thestorage medium the predetermined amount to cause the predeterminedamount of deformation in the storage medium.
 20. A data storage deviceas recited in claim 18 wherein: the cantilever mover of each write probecomprises an insulating material on the base support structure under thecorresponding cantilever and a conductive material on the insulatingmaterial so as to form a capacitor; the controller controls during thewrite mode energy storage by each capacitor to electrostatically movethe corresponding cantilever a predetermined amount so as to lower thecorresponding write tip into the storage medium the predetermined amountto cause the predetermined amount of deformation in the storage medium.21. A data storage device comprising: a deformable storage medium; aplurality of probes each comprising: a tip comprising a conductivehighly obdurate coating capable of deforming the storage medium; a tippositioning apparatus to lower the tip; a probe and storage mediumpositioning apparatus to position the probes over the storage medium; acontroller to (A) during a write mode, control the probe and storagemedium positioning apparatus in positioning the probes over the storagemedium, (B) during the write modes, control each tip positioningapparatus in lowering the corresponding tip a predetermined amount intothe storage medium so as to cause a predetermined amount of deformationin the storage medium representing data written thereto, (C) during readmodes, control the probe and storage medium positioning apparatus inpositioning the probes over the storage medium, (D) during the readmodes, control each tip positioning apparatus in lowering thecorresponding tip close to the storage medium, and (E) during the readmode, produce and measure a tunneling current between the conductiveobdurate coating of each tip and the storage medium to identify apredetermined amount of deformation caused in the storage medium belowthe corresponding tip during the write mode so that the data writtenthereto is read therefrom.
 22. A data storage device as recited in claim21 further comprising: a heater element below the storage medium; thecontroller controlling during erase modes the heater element to heat thestorage medium until deformations caused in the storage medium areremoved.
 23. A data storage device as recited in claim 21 furthercomprising: a plurality of heater elements below the storage medium; thecontroller controlling during an erase mode a selected one of the heaterelements to heat the storage medium until deformations caused in thestorage medium above the selected one of the heater elements areremoved.
 24. A data storage device as recited in claim 21 wherein: eachtip further comprises: a core material with a sharp end; and aninsulating coating over the core material except at the sharp end; theconductive highly obdurate coating being over the core material at thesharp end and the insulating coating; the controller (A) during an erasemode, controls the probe and storage medium positioning apparatus inpositioning the read probes over the storage medium, and (B) during theerase mode, produces a current between the conductive coating and thecore material of each tip to heat the storage medium below thecorresponding tip until a deformation caused in the storage medium belowthe corresponding tip during the write mode is removed.
 25. A datastorage device as recited in claim 21 wherein the conductive highlyobdurate material comprises diamond doped to be conductive.
 26. A datastorage device as recited in claim 24 wherein: the tip has a sharp end;and the diamond is aligned at the sharp end with a bias field at thesharp end during growth of the diamond.
 27. A data storage device asrecited in claim 21 wherein the conductive highly obdurate materialcomprises silicon carbide doped to be conductive.
 28. A data storagedevice as recited in claim 21 wherein the conductive highly obduratematerial comprises carbon nitride doped to be conductive.
 29. A datastorage device as recited in claim 21 wherein: the positioning apparatusincludes a moveable support structure to which the probes are connected;the controller controlling positioning of the moveable support structureand the storage medium with respect to each other during the write modeto control positioning of the probes over the storage medium; the tippositioning apparatus of each write probe comprising: a cantileverconnected to the moveable support structure and on which is located thetip of the probe; a cantilever mover to move the cantilever; thecontroller controlling during the write mode each cantilever mover tomove the corresponding cantilever a predetermined amount so as to lowerthe corresponding tip into the storage medium the predetermined amountto cause the predetermined amount of deformation in the storage medium.30. A data storage device as recited in claim 28 wherein: the cantilevermover of each probe comprises a heater element disposed on thecantilever of the probe; the controller controls during the write modeseach heater element to thermal expandably move the correspondingcantilever a predetermined amount so as to lower the corresponding tipinto the storage medium the predetermined amount to cause thepredetermined amount of deformation in the storage medium.
 31. A datastorage device as recited in claim 28 wherein: the cantilever mover ofeach probe comprises an insulating material on the base supportstructure under the corresponding cantilever and a conductive materialon the insulating material so as to form a capacitor; the controllercontrols during the write mode energy storage by each capacitor toelectrostatically move the corresponding cantilever a predeterminedamount so as to lower the corresponding tip into the storage medium thepredetermined amount to cause the predetermined amount of deformation inthe storage medium.
 32. A data storage device comprising: a storagemedium alterable by light; one or more light emitting write probescapable of emitting light; one or more read probes capable of detectingalterations of the storage medium; a positioning apparatus to positionthe read and write probes over the storage medium; a controller to (A)during a write mode, control the positioning apparatus in positioningthe write probes over the storage medium so that the light emittingwrite tips are over the storage medium, (B) during the write mode,control each light emitting write probe to emit a predetermined amountof light so as to cause a predetermined amount of alteration of thestorage medium and write data thereto, (C) during read modes, controlthe positioning apparatus in positioning the read probes over thestorage medium so that each read probe detects a predetermined amount ofalteration of the storage medium caused during the write mode, and (D)during the read mode, measure each detected predetermined amount ofalteration of the storage medium so that the data written to the storagemedium during the write mode is read therefrom.
 33. A data storagedevice as recited in claim 32 wherein: each light emitting write probeincludes a write tip comprising: a core material with a sharp end, alight emissive coating over the core material; and a conductive coatingover the light emissive coating; the controller is coupled to the corematerial and the conductive coating of each light emitting write tip toapply across them during the write mode a voltage of predeterminedamount so that the sharp end of the corresponding light emitting writetip emits a predetermined amount of light so as to cause a predeterminedamount of alteration of the storage medium.
 34. A data storage device asrecited in claim 32 wherein: each light emitting write tip comprisesporous silicon; the controller is coupled to each light emitting writetip to produce during the write mode a current of predetermined amountin the porous silicon of the light emitting write tip so that it emits apredetermined amount of light so as to cause a predetermined amount ofalteration of the storage medium.
 35. A data storage device as recitedin claim 32 wherein: the storage medium comprises: charge storage cellseach storing a charge alterable by light; a conductor around the chargestorage cells; each read probe is conductive; the controller (A) duringthe write mode, controlling each write probe to emit a predeterminedamount of light so as to cause a predetermined amount of charge in acorresponding one of the charge storage cells to be leaked off so as towrite data thereto, (B) during the read mode, controlling thepositioning apparatus in positioning each read probe over acorresponding one of the charge storage cells to detect thepredetermined amount of charge therein leaked off during the write mode,(C) during the read mode, measure the detected predetermined amounts ofcharges leaked off so that data written during the write mode to thecorresponding ones of the charge storage cells is read therefrom, and(D) during an erase mode, controlling the conductor to transfer apredetermined amount of charge to the corresponding charge storage cellsso as to restore the charges therein leaked off during the write mode.36. A data storage device as recited in claim 32 wherein: the storagemedium comprises: charge storage cells each storing a charge alterableby light; a plurality of conductors around the charge storage cells;each read probe is conductive; the controller (A) during the write mode,controlling each write probe to emit a predetermined amount of light soas to cause a predetermined amount of charge in a corresponding one ofthe charge storage cells to be leaked off so as to write data thereto,(B) during the read mode, controlling the positioning apparatus inpositioning each read probe over a corresponding one of the chargestorage cells to detect the predetermined amount of charge thereinleaked off during the write mode, (C) during the read mode, measure thedetected predetermined amounts of charges leaked off so that datawritten during the write mode to the corresponding ones of the chargestorage cells is read therefrom, and (D) during an erase mode,controlling a selected one of the conductors to transfer a predeterminedamount of charge to the corresponding charge storage cells so as torestore the charges therein leaked off during the write mode.
 37. A datastorage device comprising: an electrically alterable storage medium; atriangular ridge support structure; one or more triangular ridges on thebase structure; a positioning apparatus to position the triangular ridgesupport structure over the storage medium; an acoustic wave generator onone of the triangular ridge support structure and the storage medium toproduce surface acoustic waves thereon that propagate in a directionparallel to the axial length of the triangular ridges; a controller to(A) during a write mode, control the positioning apparatus inpositioning the triangular ridge support structure over the storagemedium so that each triangular ridge is over a corresponding region ofthe storage medium to be written, (B) during the write mode, control theacoustic wave generator to produce an acoustic wave, (C) during thewrite mode, apply at a predetermined time across each triangular ridgeand the storage medium a voltage pulse having a predetermined voltageand duration while the acoustic wave produced during the write modepropagates so that a region of the triangular ridge above thecorresponding region to be written is displaced down theretoward and thecorresponding region to be written is electrically altered by apredetermined amount, (D) during a read mode, control the positioningapparatus in positioning the triangular ridge support structure over thestorage medium so that each triangular ridge is over a correspondingregion of the storage medium to be read, (E) during the read mode,control the acoustic wave generator to produce an acoustic wave, (F)during the read mode, detect with each triangular ridge at apredetermined time while the acoustic wave produced during the read modepropagates so that a region of the triangular ridge above thecorresponding region to be read is displaced down theretoward apredetermined amount of electrical alteration of the correspondingregion to be read, (G) during the read mode, measure each detectedpredetermined amount of electrical alteration of the correspondingregion to be read so that the data written to thereto during the writemode is read therefrom.
 38. A biochemical instrument comprising: a probecomprising: a porous tip; a tip positioning apparatus to position thetip with respect to a sample material; a tip and sample positioningapparatus to position the probe and sample material with respect to eachother; a controller to (A) control the positioning apparatus inpositioning the probe over the sample, (B) control the tip positioningapparatus in lowering the tip into the sample material to produce abiochemical interaction between the porous tip and the sample material.